內  文

更新日期:90.08.09

(*) 摘要：Cree公司發表以碳化矽製成的蕭特基二極體產品，規格分別是600伏特1安培與4安培的規格。

Abstract: DURHAM, N.C. Cree, Inc. today introduced the first silicon carbide (SiC) Schottky diode chips to be offered by the company. The initial product family will consist of two products: a 600 Volt, 1 Amp device and a 600 Volt, 4 Amp device. The company is currently sampling devices and targeting to ramp production during the first quarter of fiscal 2002. Additional offerings are expected to be added to the product family over the next year.

　

Cree, Inc. Introduces Its First Schottky Diodes

DURHAM, N.C. Cree, Inc. today introduced the first silicon carbide (SiC) Schottky diode chips to be offered by the company. The initial product family will consist of two products: a 600 Volt, 1 Amp device and a 600 Volt, 4 Amp device. The company is currently sampling devices and targeting to ramp production during the first quarter of fiscal 2002. Additional offerings are expected to be added to the product family over the next year.

Potential SiC Schottky diode applications include power conditioning for high frequency power supplies and power factor correction as well as for power conversion in motor controls. Presently up to 50% of the power loss in a typical power circuit is attributable to the switching speed of the silicon PIN diode. Because of the much faster switching speed of a SiC Schottky diode, it is anticipated that the switching loss associated with the diode can be virtually eliminated, resulting in an overall 4-7% reduction in the amount of power consumed by the circuit. This reduction in power consumption should allow for smaller heat sinks and switch requirements thus reducing the cost and size of the circuit.

Chuck Swoboda, President and Chief Executive Officer of Cree stated, ``Our focus and investment in R&D continues to expand our product portfolio by offering new devices that we believe are superior to existing silicon-based products presently available in the marketplace. These devices are state-of- the-art and enable Cree to deliver on the long-standing promise of silicon carbide power device capabilities.''

Also announced by Cree are power results demonstrated by Kansai Electric Power Co., Inc. (KEPCO) of Osaka, Japan. KEPCO recently presented power results using devices fabricated at Cree in our joint program at the International Symposium on Power Semiconductor Devices in Osaka, Japan where they demonstrated record results with a 6 kV MOSFET (metal-oxide-semiconductor field effect transistor) and a 5.5 kV JFET (junction field effect transistor) that had on-resistances that were 1/25th and 1/65th lower, respectively, than the theoretical limit for an equivalent silicon device. Additionally, high voltage SiC PIN diodes were demonstrated with blocking voltages up to 19 kV, a 50% increase over our previous record and almost double what is commercially available on silicon. KEPCO believes that these devices could lead to the development of circuits with much lower power losses than in silicon-based circuits.

North Carolina-based Cree, Inc. develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN) and related compounds. The company's products include blue and green LEDs, RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development. Cree has new product initiatives based on its experience in SiC and GaN-based semiconductors, including blue laser diodes for optical storage applications, high frequency microwave devices for radar and other communications systems, and power devices for power conditioning and switching. For more information on Cree, visit <<http://www.cree.com>>.

This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of new products; the risk the company will be unable to manufacture the products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the rapid development of new technology and competing products that may impair demand; risks associated with the commercial release of new products under development, including the possibility we will be unable to develop and manufacture commercially viable versions of such products; the potential lack of customer acceptance of new products; and other factors discussed in Cree's filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 25, 2000 and subsequent quarterly reports.=========================================================================================================

更新日期:90.07.31

1 Philips Semiconductor backlight driver operates on up to 600Vdc input

飛利浦半導體利用650V BCD功率邏輯製程成功開發出半橋LCD背光燈應用之驅動器。

　

Posted : 18 Jul 2001

Philips Semiconductors, a division of Royal Philips Electronics, (NYSE:PHG, AEX:PHI), has launched a highly efficient new 600V fully integrated half-bridge driver IC for liquid crystal display (LCD) backlighting. Manufactured in the company's advanced 650V BCD power-logic process, the UBA2070 can be connected directly to rectified AC line supplies without the need for a separate up/down convertor.

Philips Semiconductors has a world-class reputation for driving fluorescent lamps, such as TL and CFL types, and the high voltage technology and expertise developed for these lamp systems have now been used to extend the company's product range to include cold cathode fluorescent lamps (CCFL).

The UBA2070 high voltage, monolithic CCFL driver IC has a typical input voltage range of 12V to 600V DC. This high-voltage input capability provides an optimum system solution for CCFLs in a wide range of products that use LCD screens. These include laptop PCs, personal digital assistants and satellite navigation systems. Used with a high voltage input, the UBA2070 runs at efficiency levels in excess of 90 per cent and is ideally suited for high-power multiple-lamp systems such as those used in LCD monitors.

"The unique blend of features, coupled with the low number of external components required, makes the UBA2070 the most efficient solution currently available on the market today," said Latif Gau, product marketing manager for lighting ICs at Philips Semiconductors.

　

The UBA2070 offers an unrivalled range of features, including adaptive non-overlap time control, integrated high voltage level-shifting functions, a power-down function and capacitive mode protection. Also including lamp failure detection, short circuit detection and a dimming feature, it provides the highest level of integration available for fluorescent lamp driving. In particular, by dimming down the maximum light output by 95 per cent, the UBA2070 offers LCD monitor designers greater scope for enhancing the user interface.

The UBA2070 also offers system designers more freedom with respect to supply voltage choice, thus enabling a more flexible system architecture in combination with the power supply. Its outputs drive two discrete external power MOSFETS in a half bridge configuration.

　

Two versions of the chip are available - the UBA2070T (SO16), which is housed in a small outline package with 16 leads, and the UBA2070P (DIP16) which is a dual-in-line package, also with 16 leads.

Philips Semiconductors, which had annual revenues of approximately US$ 6.3 billion in 2000, designs and manufactures semiconductors and silicon systems platforms. Philips Semiconductors is spearheading the emerging field of systems on silicon solutions with the innovativeNexperia? platform and VLSI Velocity? tool set. The company's Sea-of-IP? design methodology allows plug and play intellectual property blocks for easily customizable products. The company is a leader in communications, consumer, PC peripherals and automotive semiconductors, which are key applications for convergence in end-user products. Philips Semiconductors is headquartered in Eindhoven, The Netherlands, and has operations throughout the world.

For more information: www.semiconductors.philips.com.

　

更新日期:90.07.18

1.Infineon Technologies Introduces Second Generation of Integrated Power ICs -

CoolSET F2 Family Enables Design of Simple and Efficient Switched Mode Power Supplies

（Infineon發表第二代CoolSET Power IC模組）

Munich/Nuremberg, Germany - June 19, 2001 - At the PCIM 2001 show (Nuremberg, 19. - 21. June 2001), Infineon Technologies (NYSE/FSE: IFX), a leading manufacturer of semiconductors for power management and supply, announced its second generation of integrated multi-chip power ICs, designated CoolSET? F2 family. Like the first CoolSET generation, CoolSET F2 integrates a power MOSFET in CoolMOS technology (MOS = Metal Oxide Semiconductor), which was developed by Infineon Technologies, and a fixed frequent pulse width modulator (PWM) control IC into one 8-pin Dual Inline Plastic (DIP-8) package, of which six pins are active. The CoolSET F2 family offers enhanced protection features and low-power standby.

　

2.High voltage RF MOSFETs - offer 65MHz full rating

高壓射頻金氧半電晶體

APT's new line of high voltage rugged RF MOSFETs has been introduced specifically for use with high power RF generators being used extensively in semiconductor manufacturing, CO2 Laser and MRI equipment. These new RF MOSFETs are available in the common source TO-247 packages in mirror-image A and B configuration which facilitates layout of both parallel and push-pull operation. Typical operating voltage for the 500V ARF460A/B is 150V, 300V for the 1kV ARF461A/B. The rated power dissipation is 250W with an R?J-C of 0.5°C/W, and a 13dB minimum gain is at 65 MHz. Applications for these devices include RF Plasma generators at 13, 27 and 40.68MHz, MRI RF sources up to 64 MHz, and Broadband linear amplifiers 1.5 to 30MHz.

Advanced Power Technology Europe (APT)

url: http://www.advancedpower.com

　

3Dual channel MOSFET switches reduce component count in USB designs

雙通道金氧半電晶體減少USB設計時需要外加的元件

Combining the dual DMOS MOSFETs with built-in error detection circuits and high levels of protection, the BD651xF series offers miniature SOP8 packaging and very low on resistances. The series comprises four ICs with typical RDS(ON) ratings of 100mW, and has typical current limit threshold ratings of either 2 or 1.1A. The ICs are compatible with 3 to 5.5V power supplies and operate at temperatures of between -25 and 85°C. Maximum power dissipation is 450mW at 25°C.

Rohm Electronics GmbH

url: http://www.rohm.com

　

更新日期:90.07.13

摘要：CREE在7/12宣布提供三吋的偏軸(off-axis)碳化矽晶圓(SIC)，包含4H &6H N-typesubstrate

Abstract: CREE today announced the introduction and

immediate availability of two new 3-inch, 4H and 6H, off-axis, n-type

silicon carbide (SiC) wafers to its wafer product family. These new wafer

products will complement the previously introduced 3-inch, 4H and 6H,

on-axis SiC wafers.

　

Cree, Inc. Expands 3-Inch Wafer Product Line

July 12, 2001

Durham, NC. Cree, Inc. (Nasdaq: CREE) today announced the introduction and

immediate availability of two new 3-inch, 4H and 6H, off-axis, n-type

silicon carbide (SiC) wafers to its wafer product family. These new wafer

products will complement the previously introduced 3-inch, 4H and 6H,

on-axis SiC wafers. Potential applications for these products include the

high-volume power market including low-voltage Schottky diodes. Cree is the

world's only known manufacturer with commercially available single crystal

3-inch SiC substrates.

　

This expansion of Cree's product family further enables high volume device

production as component manufacturers using 3-inch technology should have a

significant cost advantage over those utilizing 2-inch technology.

Dr. Robert Glass, Cree Materials Business VP and General Manager stated,

"Cree continues to demonstrate its strength and expertise in transitioning

materials research and development gains into enabling technologies. We

remain committed to identifying needs in the marketplace and are focusing

our efforts to meet those requirements."

North Carolina-based Cree, Inc. develops and manufactures semiconductor

materials and devices based on silicon carbide (SiC), gallium nitride (GaN)

and related compounds. The company's products include blue and green LEDs,

RF power transistors for use in wireless infrastructure applications, SiC

crystals used in the production of unique gemstones and SiC wafers sold for

use in research and development. Cree has new product initiatives based on

its experience in SiC and GaN-based semiconductors, including blue laser

diodes for optical storage applications, high frequency microwave devices

for radar and other communications systems, and power devices for power

conditioning and switching. For more information on Cree, visit

http://www.cree.com.

This press release contains forward-looking statements that are subject to

numerous risks and uncertainties that may cause actual results to differ

materially from those indicated. Actual results may differ materially due

to a number of factors, including uncertain product demand; the possibility

we will not be able to manufacture the products with sufficiently low cost

to maintain acceptable margins; uncertainty whether we can increase

production quickly enough to meet delivery commitments; risks associated

with the commercial release of new products under development, including

the possibility we will be unable to develop and manufacture commercially

viable versions of such products; and other factors discussed in our

filings with the Securities and Exchange Commission, including our report

on Form 10-K for the year ended June 25, 2000 and subsequent reports filed

with the Commission.

Contact:

Fran Barsky

Investor Relations Manager

Cree, Inc.

Tel: 919-313-5397

Fax: 919-313-5452

http://www.compoundsemiconductor.net/

　

2001.06.19

INDUSTRY'S SMALLEST PACKAGED IGBT FOR AUTOMOTIVE IGNITION TARGETS IMPROVED EFFICIENCY AND REDUCED VEHICLE EMISSIONS

Fairchild宣佈研發出用於汽車點火線圈驅動器的EcoSPARK IGBT最新產品，其宣稱此產品可以使silicon chip的面積縮小30%且可採用工業標準D-Pak或D2-Pak來封裝。在此之前，矽製的點火線圈驅動器只能以D2-Pak來封裝，但由於其新型的EcoSPARK技術可使其die size足夠小因而能適用於D-pak封裝，且此技術並不降低其performance。

EcoSPARK ignition coil drivers integrate an active voltage clamp between the collector and the gate that provides self-clamped inductive switching (SCIS) and limits the stress applied to the ignition coil. The EcoSPARK series enables the same level of SCIS robustness (300mJ) in the 60% smaller D-Pak package. Saturation voltage is rated at 175°C with 10A with some products as low as 1.9 V maximum. A 500mJ SCIS rated part is also being introduced that offers a cost reduction over the previous generation. The EcoSPARK family consists of 360 and 400V products in the D-Pak (TO-252) and D2-Pak (TO-263) packages with true single pulse collector-to-emitter avalanche energy ratings from 200mJ to 500mJ

<http://www.fairchildsemi.com/news/2001/0106/ecospark.html>

　

2001.06.19

NEW FAST-RECOVERY MOSFET (FRFET?) PRODUCT FAMILY IMPROVES EFFICIENCY AND TURN-OFF DV/DT IMMUNITY FOR TELECOM/SERVER POWER SYSTEM DESIGNS

Fairchild發佈一新的500V，fast-recovery的MOSFET產品，此產品乃針對通訊與伺服器的電源供應系統所設計。比較於一般傳統的MOSFETs，此新型的FRFETs可以提昇超過%50的diode反向回復特性(Qrr, trr)且可增加turn-off dv/dt immunity。此FRFETs的回復特性可以降低系統的功率損耗，並可提昇其ruggedness與較高的操作頻率。

　

Features

(1) FQA24N50F

          RDS(on) = 0.2W @VGS = 10 V

(2) FQA28N50F

RDS(on) = 0.16W @VGS = 10 V

(3) FQL40N50F

           RDS(on) = 0.11W @VGS = 10 V

<http://www.fairchildsemi.com/news/2001/0106/frfet.html>

　

日更新日期:90.07.10

Mitsubishi Silicon tailors epi wafer for power MOSFETs, bipolar devices Semiconductor Business News

(07/10/01 15:14 p.m. EST)

摘要：三菱(Mitsubishi Silicon America)於7/10提出一種N/N+磊晶片的新製程(iGEM)，適用於功率二極體與power MOSFET。採用該技術可以降低元件漏流與提高良率。目前可供應六吋矽磊晶片。

　

Abstrate: SALEM, Ore.--Mitsubishi Silicon America today announced a new wafer substrate product that features N/N+ epitaxial silicon for reduced junction leakage and improved device reliability in power ICs and bipolar devices.

"We designed this material to meet the specific needs of power MOSFET and bipolar device makers," said Fritz Kirscht, who led MSA's engineering team in developing the product over the past two years. "Specifically, we addressed the need to reduce device current leakage, stabilize device yields in contaminated lines, improve device reliability, and enhance performance at lower levels of resistivity."

The epi substrate wafers, called iGEM, are currently available with diameters of 150 mm (6 inches). The wafers are a result of Mitsubishi Silicon America's experience in heavily doped, low resistivity wafers, according to managers. The U.S. subsidiary of Mitsubishi Materials Corp. said tests by customers have demonstrated reduced junction leakage and more robust gettering. Theenhanced gettering reduces variation in critical device properties, providing greater device reliability, said the company.

Other potential advantages currently being evaluated include reduced slip and bow, resulting in improved mechanical stability of the wafer, said MSA in Salem.

"We see the opportunity for customers to eventually lower their total cost of ownership using iGEM," said George Robillard, vice president of marketing at Mitsubishi Silicon America. "The engineered improvements in iGEM complement conventional techniques that increase gettering in low resistivity wafers -- techniques like thin films and backside damage."

According to MSA, the switch from conventionally gettered, low-resistivity wafers to iGEM epi substrates requires little, if any change in semiconductor fab processes.

http://www.siliconstrategies.com/story/OEG20010710S0042

　

　

更新日期:90.07.03

摘要：Infineon 推出第二代CoolMOS產品 ，崩潰耐壓提高到650&800V。

Abstract : Infineon Technologies AG today launched a series of second-generation integrated multi-chip power devices that combine a power MOSFET--fabricated in the company's CoolMOS technology. The CoolSET F2 products are available with drain-source breakdown voltages of both 650 and 800 volts, for output currents of 1 to 3 A. The primary voltage ranges from 85 to 265 V, said Infineon.

http://www.siliconstrategies.com/story/OEG20010619S0068

　

Infineon aims CoolMOS power technology at eliminating heatsinks

Semiconductor Business News

(06/19/01 19:32 p.m. EST)

　

NUREMBERG, Germany -- Infineon Technologies AG today launched a series of second-generation integrated multi-chip power devices that combine a power MOSFET--fabricated in the company's CoolMOS technology--with a fixed frequent pulse width modulator (PWM) control chip. The two chips are combined inside an 8-pin plastic DIP.

"Compared to components produced in standard power MOSFET technology, devices in CoolMOS technology reduce the area-specific resistance RDS (on) by a factor of five," said Reinhard Ploss, head of Infineon's Automotive & Industrial group. "It is Infineon's goal to offer intelligent power management and supply solutions, which substitute heatsinks in the long term."

The new CoolSet F2 series was introduced by Munich-based Infineon at the PCIM 2001 trade show in Nuremberg. The series is aimed at an extremely wide range of applications, including battery chargers for mobile phones and portable systems, printers and fax machines, DVD players, set-top boxes, and auxiliary power supplies for PCs, washing machines and other equipment.

CoolSET F2 products are available with drain-source breakdown voltages of both 650 and 800 volts, for output currents of 1 to 3 A. The primary voltage ranges from 85 to 265 V, said Infineon.

The CoolSET F2 family derivatives ICE 2A165, ICE 2A265, ICE 2A365, and ICE 2A280 are available in sample quantities. In quantities of 10,000, the component ICE 2A365 (47-W maximum output power at 85 V--265 V primary voltage) is priced at 0.95 euro each (or about 82 cents).

　

更新日期:90.06.22

新型高壓模組將應用在工業馬達驅動、感應加熱和發電等場合

High voltage modules for use in industrial motor drives, induction heating and power generation

21 June 2001

Dynex Semiconductor has unveiled a new family of high voltage fast recovery diode (FRD) modules. They are for use in industrial motor drives, induction heating and power generation.

The DFM range includes single and dual diodes rated at 1.8kV and 3.34kV. The 1.8kV variants include single diodes on an L footprint package measuring 106 X 62MM with ratings of 300A and 600A and dual diodes in an F footprint measuring 130 X 140mm with ratings of 600A, 900A and 1200A per diode.

　

更新日期:90.06.15

2001-05-23 , E/PN-1222/70

Product News From Philips Semiconductors

Philips Semiconductors launches next generation SMART Power devices

皇家菲利普電子公司已量產TOPFET2系列的電源管理與切換元件,

該系列元件使最新的TrenchMOS技術,能提供車用電源保護應用,如車燈電源管理與系統保護,

TOPFET系列的操作電源為12-24V,電流25A.包裝有3-Pin TOP220 & D2PAK及7-Pin SOT 427兩種.

並能回饋失效訊號給控制系統.<http://www-us2.semiconductors.philips.com/news/content/file_703.html>

　

2001-05-23 , E/TN-1224/70

Philips Semiconductors gears up for world's first Trench PowerMOS naked dies for automotive applications

菲利普推出全球首顆裸露晶粒(未封裝)的Trench製程功率電晶體,

提供給汽車製造商做為EPAS(Electric Power Assisted Steering)

與ISA(Integrated Starter Alternator)開發的應用,能幫助廠商大幅降低製造成本

<http://www-us2.semiconductors.philips.com/news/content/file_702.html>

更新日期:90.06.07

STMicroelectronics宣稱推出高電壓的晶片，整合15W離線式電源供應器 <http://us.st.com/stonline/press/news/year2001/p040d.htm>

STMicroelectronics Announces High Voltage Chip Integrating 15W Offline Power Supply
L6590 includes 700V DMOS transistor plus control circuits for flyback, boost or forward AC-DC converters

Geneva, May 23, 2001 - Designed to simplify offline power supplies up to 15W, the L6590 <http://us.st.com/stonline/books/pdf/docs/5751.pdf> Fully Integrated Power Supply chip from STMicroelectronics (NYSE: STM) integrates a 700V power MOSFET switch, plus all of the control circuits needed to build a converter using flyback, boost or forward topologies. The device operates over the universal input voltage range of 85VAC to 265VAC and also with DC inputs, making it a flexible solution for consumer applications in all world markets.

An on-chip 65kHz oscillator eliminates the need for external oscillator components and a non-dissipative internal startup circuit guarantees high efficiency at light load and also further reduces the external parts count. Standby operating mode ensures high efficiency at light loads (Pin<200mW @ Po=0W) meeting the tightest regulations concerning standby operation. A brownout function prevents spurious turn on at power down and protects against input line undervoltage. In addition, an on-chip error amplifier improves primary regulation, avoiding the cost of an external optocoupler and op-amp feedback network.

Typical applications of the L6590 include wall plug power supplies, AC-DC adapters, auxiliary supplies for CRTs, LCD monitors, desktop PCs and servers, fax machines and laser printers.

Three package versions are available. The L6590D is assembled in a 16-lead Small-Outline package (SO-16W) and provides both the brownout and error amplifier connections. Types L6590N and L6590AN are both assembled in 8-lead DIP packages and exclude either the error amplifier (L6590AN) or the brownout function (L6590N).

Design support for the L6590 includes an evaluation package - order code EVAL6590N -that contains samples, an evaluation board and PC software, which simulates the application function. This software assists in the selection of external components and simulates overall application performance. An application note is available from www.st.com.

The L6590 is fabricated using ST's proprietary BCD-Offline technology, which allows the integration of 700V power devices and control circuits on the same chip. This technology is used in a variety of applications including offline power supplies and energy-saving electronic lamp ballasts. BCD-offline is a high voltage implementation of ST's bipolar-CMOS-DMOS (BCD) technology family that is applied in a broad range of smart power applications ranging from simple motor drivers to complex smart power subsystems with embedded microcontrollers. 

　

1.大陸功率半導體需求人民幣40億元

瑞士ABB半導體積極投入 2001/05/30

　看好大陸電力及運輸需求不斷擴大，全球重要功率元件供應商ABB半導體，加碼投入大陸電力傳輸系統的建構，供應高精密功率半導體產品。目前主要提供PCT、DIODE、GTO、IGCT及IGBT等產品，應用在機車牽引、電力系統及能源設備等需要。

　瑞士ABB半導體全球開放市場銷售經理Benno Mikosch表示，未來15∼20年功率元件都將採用矽材料，以半導體晶片方式生產。他說，中國是全球最大的市場，未來在能源開發及電力需求將高速成長，而穩定性高的功率半導體產品將廣汎被運用。他強調，目前三峽大壩配電工程中，ABB已加入設計與開發。

　據了解，ABB半導體有多年功率半導體設計與生產經驗，員工達到400人。由於功率半導體是電氣設備的核心，廣泛應用在電力、傳動牽引及化工等產業。　　

　ABB市場經理Eric Carroll表示，由於大陸經濟蓬勃發展，其中在功率半導體需求達到人民幣40億元。目前ABB在大陸改變專注於核心客戶發展的策略，將擴大市場到各基礎工業領域，2001年ABB在大陸市場將有近20％的市場佔有率。

 

 

2.Maxim的低成本雙輸出SLIC能源供應利用標準變壓器

Low-Cost, Dual-Output SLIC Power Supply Uses Standard Transformer

SUNNYVALE, CA-May 23, 2001-Maxim Integrated Products introduces the MAX1856 power supply IC, which generates a low audio noise "talk battery" supply at -24V and a stiff "ring battery" supply at -72V for voice-enabled broadband consumer premises equipment (CPE) applications such as VoDSL modems, VoPacket cable modems, LMDS, MMDS, WLL, and FTTH. To minimize total cost, the MAX1856 controller uses a single external N-channel MOSFET, a low-cost standard transformer available from multiple vendors, and few additional low-cost components. Its wide 3V to 28V input voltage range allows operation with a low-cost, unregulated wall adapter output.

 

The MAX1856 employs flyback topology to reduce input ripple current, which permits use of a smaller, lower cost input capacitor. It also employs digital soft-start to permit a smaller input capacitor. Its switching frequency can be set from 100kHz to 500kHz, or synchronized to an external clock signal in order to reduce switching noise.

 

The output voltages are set by selecting the appropriate transformer turns ratio and feedback resistor values, allowing flexibility to work with many different SLIC chip sets. The separate split feedback scheme provides good cross regulation on both output signals and provides a stiff supply that reduces ring trip transient noise.

 

The MAX1856EUB comes in a 10-pin μMAX package and is specified for the extended-industrial temperature range (-40°C to +85°C). Prices start at $1.57 (1000-up, FOB USA). The MAX1856EVKIT (evaluation kit) is available to speed designs.

 

3. ON半導體推出整合程度相當高之多相式降壓整流控制器

ON Semiconductor rolls out highly integrated multiphase buck controllers

Posted : 28 May 2001

 Claimed to be the industry's most highly integrated multiphase buck controller ICs for powering high-performance microprocessors, the CS5301 and CS5332 meet the Vcore power requirements for Intel's Pentium 4 and AMD Athlon processors.

The CS5301 is a three-phase step-down controller that employs the company's proprietary multi-phase control architecture, known as Enhanced V2, to guarantee balanced load current distribution, ensure fast transient response and provide high performance. Its three-phase switching topology reduces ripple on the input and output.

The CS5332 is a two-phase buck controller with four on-board gate drivers and identical control functionality. Like the CS5301, it also runs from either 5V or 12V supplies and is specified for operation between 200kHz and 800kHz.

Both ensure fail-safe protection from overvoltage and overcurrent conditions, and offer direct (single-pin enabled) on/off control. They also feature loss-less current sensing, adjustable output voltage positioning and hiccup-mode current limiting.

The CS5332 and CS5301 are housed in 28-lead and 32-lead SOICs and priced at $4.17 and $4.71, in 1,000 pieces, respectively.

　

更新日期:90.05.25

(*) 2001/05/23  Microsemi, Cree team up to commercialize SiC Schottky diodes

Abstract : IRVINE, Calif.--Microsemi Corp. and Cree Inc. today announced an alliance to develop and commercialize new silicon-carbide (SiC) Schottky diodes for a wide range of high-volume power chip applications.

摘要：Microsemi Corp.宣布與現有碳化矽(SiC)晶片與磊晶片最主要的供應商CREE聯合，將發展商業化生產碳化矽蕭特基(schottky)二極體之技術。Microsemi負責高壓元件的包裝技術，Cree負責磊晶片製作。

SiC material and processes are capable of handling high voltage in ultra-high power densities, said the two companies. Microsemi in Irvine and Cree in Durham, N.C., said they will cooperate in launching a new series of Schottky products under the alliance.

The SiC-based devices will be aimed at such applications as switching power supplies, down-hole drilling systems, telecommunications rectifiers, and charging circuits in implantable cardioverter defibrillators, according to two companies.

Under the terms of a development agreement, Microsemi will provide packaging, application, and market channel expertise, while Cree supplies SiC chips for use as high-power and high-voltage Schottkys.

Until now, Microsemi said it has relied on university R&D groups to try to develop SiC products for commercialization. This new agreement is expected to allow Microsemi to accelerate its SiC program by relying on Cree's SiC manufacturing know-how, bypassing university laboratories.

"We have been very successful in identifying potential commercial applications for SiC Schottkys, which range from energy conscious cardioverter defibrillators to base station power supplies," said Manuel Lynch, vice president of marketing and business development for Microsemi. "We wanted to move from laboratory scale development to full scale production as we continue our strategy of commercializing SiC.

"Cree provides us with SiC Schottky expertise and is a formidable partner to help launch these products for high-volume applications," he added.

The joint development agreement will combine the use of Microsemi's patented Powermite line of packages with Cree's proprietary SiC Schottky diodes. Microsemi said its Powermite package can handle up to four times the power of equivalently sized packages.

"By combining Cree's expertise in SiC chip technology with Microsemi's high-power packaging knowledge, we believe this relationship will prove beneficial in developing SiC Schottky devices for high-volume applications and enable initial penetration into the power device market," Chuck Swoboda, president and chief operating officer of Durham-based Cree.

Semiconductor Business News <http://www.semibiznews.com>

http://www.siliconstrategies.com/story/OEG20010523S0030  

更新日期:90.05.11

(1) Intersil Completes $338 Million Discrete Power Sale

(Intersil以US. $338 million出售旗下分離式功率元件事業給Fairchild Semiconductor International)而逐漸轉向以wireless communication為主要發展事業。

IRVINE, Calif., March 19, 2001鎸ntersil Corporation (NASDAQ: ISIL) announced today that it has completed

the sale of its discrete power business to Fairchild Semiconductor International (NYSE: FCS) for $338 million

in cash, completing its transition to a company focused on wireless access and communications analog markets.

Intersil plans to use cash proceeds from the sale for general corporate purposes and complementary alliances and

acquisitions.

http://www.intersil.com/pressroom/20010319_ISL_FCSCompletefinal_English.asp

　

(2)智慧型功率開關可提供自動化應用

NEW INTELLIGENT POWER SWITCHES FOR AUTOMOTIVE APPLICATION

http://www.motorola.com/semiconductors/

電子產品切換主要是靠relay。Motorola近來提出E-Switch的概念，提供設計者更強健、

智慧型的元件。目前MC33888系列可提供40Amp的切換能力，可用作照明控制、

馬達控制、車用安全裝置、動力方向盤和門窗鎖等應用.

E-SWITCH is a Family of Intelligent Power Switches to Enable the Replacement of Electromechanical Relays in Vehicles by Providing a Flexible and Cost Effective System Solution

DETROIT, MICHIGAN - May 8, 2001 - Higher reliability for instrumentation and body control may be achieved by automakers with the replacement of traditional electromechanical relays by an electronic solution that is flexible, cost effective and intelligent. E-SWITCH is the ideal answer for today's automakers seeking reduced cost, weight, and size for electronic control modules. With the E-SWITCH products Motorola, Inc. (NYSE:MOT) is introducing a new family of intelligent power switches for automotive applications.

　

　

　

更新日期:90.04.27

2001.4.27 Fairchild NEW POWER MANAGEMENT IC PROVIDES LOW-COST, SPACE-SAVING SOLUTION FOR LCD PCs AND INTERNET APPLIANCES

Fairchild發佈FAN5235新型高效率功率處理IC, 主要被設計用來當作LCD PC, 網路設備, 及其它筆記型電腦中功率元件的電源轉接器.

Features :

(*) Synchronous rectification

(*) ±1% precision internal reference

(*) >90% efficiency

(*) Input and output voltage feedback

(*) 5.6V TO 24V input voltage range

(*) Internally set 300kHz ± 15% oscillator

(*) 5V and 3.3V Main outputs switch out of phase

(*) Adjustable boost converter for 12V

(*) Boost converter slaved to 5V Main

(*) Input UVLO

(*) Outputs OVP of Buck Converters

(*) Precision current limit option for 5V,3.3V Main

(*) Power Good Voltage Monitor

<http://www.fairchildsemi.com/news/2001/0104/fan5235.html>

　

*) 2001.4.26: Fairchild NEW CONTROLLER IC SIMPLIFIES IMPLEMENTATION OF POWER FACTOR CORRECTION IN SWITCH MODE POWER SUPPLIES

Fairchold發佈FAN7527電源供應控制器, 其可提供簡單且高性能的功率因子校正功能. 可應用於electronic ballast及低功率高密度的電源供應器

Features :

(*) Internal Startup Timer

(*) Internal R/C filter eliminates the Need for an External R/C filter

(*) Very Precise Adjustable Output Over Voltage Protection

(*) Zero Current Detector

(*) One Quadrant Multiplier

(*) Trimmed 1.5% Internal Bandgap Reference

(*) Under Voltage Lock Out with 3V of Hysteresis

(*) Totem Pole Output with High State Clamp

(*) Low Startup and Operating Current

(*) 8-Pin DIP or 8-Pin SOP

<http://www.fairchildsemi.com/news/2001/0104/fan7527.html>

　

(*) 2001.4.20 : Fairchild FIRST ANNOUNCED POWER MANAGEMENT SOLUTION FOR VRM 8.5 PROCESSORS IN DESKTOP PCs

Fairchild發佈FAN5056MV85功率處理IC, 其可應用於桌上型電腦中並可相容於Intel PentiumIII VRM 8.5的處理器.

Features :

(*) Output programmable in 25mV steps from 1.05V to 1.825V using a dynamically programmable integrated 5-bit DAC

(*) Controls adjustable linears for Vclock (2.5V), Vnorthbridge (1.8V) or Vagp (selectable 1.5V/3.3V), and Vadj (1.2V nominal)

(*) Remote sense

(*) Programmable Active Droop ? up to 200mV

(*) Drives N-Channel MOSFETs

(*) Overcurrent protection using MOSFET sensing

(*) Overvoltage protection including startup

(*) 85% efficiency typical at full load

(*) Integrated Power Good and Enable/Soft Start functions

(*) Meets Intel VRM8.5 specifications using minimum number of external components

(*) 24 pin SOIC package

<http://www.fairchildsemi.com/news/2001/0104/fan5056.html>

　

　

更新日期:90.04.27

1..20001-01-23 Philiphs PD

<http://www.semiconducts.philips.com/publications/content/file_740.html>

<http://www.semiconducts.philips.com/publications/content/file_602.html>

<http://www.semiconducts.philips.com/pip/tea1521t>

STARpulg SMPS ICs offer real power to designers

Philips半導體發表最新一家族系列的SMPS(交換模式電緣源供應)IC，該系列IC為木前全求唯一能直接以市電操作，適合功率至30W的電源供應器設計使用。

利用Philips的SOI- A-BCD2(EZ-HV)技術，提供其高壓元件650V與低壓元件整合。該系列IC因而能整合入可調整的保護電路，包括過電流與失電壓兼控、溫度與短路保護電路。更由於採用Valley切換電路設計，其切換損失大幅降低。IC也設計有可供調整操作頻率與供率因子的接腳，大幅簡化產品的設計與量產上市的時間。

目前該系列IC有TEA152x(歐規) TEA 151X(美、日規)兩型，操作範圍90~275V，包裝有DOP8 SO14適合2,3,7,10與15W輸出及10,20,30W輸出的DBS9P。

該系列產品可應用於Plug插座電源、鹵素燈點燈、霓虹燈、LCD背光源、行動電話充電、電漿電視驅動與汽車音響等。

2.Intersil 提出新的電源管理IC：ISL6223

Intersil Portable Power Devices Enable AMD𠏋 High-Speed, Mobile Notebook Processors

http://www.intersil.com

其他產品：

1.來源:http://www.mitsubishielectric.com/r_and_d/tech_showcase/ts_a_5.php

標題:Wide-band Wavelength Monitor Integrated Laser Diode Module

摘要: Mitsubishi Electric Corporation 最近公佈積體化LD(LD:Laser Diode)模組波長監視的發展。這個模組提供相當於DWDM (DWDM:Dense Wavelength Division Multiplexing)系統有大可調波長特性的穩定波長。預期最遲在2001年前將這個模組用於商業產品。

　

更新日期:90.04.20

(*) 4/16 http://www.siliconstrategies.com/story/OEG20010416S0034

Cree expands 3-inch SiC wafer offering for RF, microwave chips

Cree於4/16宣布將提供三吋的N型4H-SiC晶片作為RF & 微波元件之用

Archives

DURHAM, N.C. -- Cree Inc. here today announced availability of 3-inch diameter n-type 4H silicon-carbide (SiC) wafer substrates for production of radio-frequency (RF) and microwave devices.

Compared to existing 2-inch wafers, the new 3-inch diameter substrates more than double the available area for devices, said Cree, which believes it is the industry's only volume producer of single-crystal 3-inch SiC wafers.

Cree also today announced it has demonstrated 3-inch semi-insulating 4H SiC substrates. The company said larger semi-insulating SiC substrates will allow for cost-effective scaling of RF and microwave products in commercial production.

About 18 months ago, Cree introduced 3-inch n-type 6H SiC wafers for volume production of optoelectronics (see Oct. 8 story <http://www.siliconstrategies.com/story/OEG19991008S0002>).

(*) General Semi claims fourfold increase in MOSFET current-cell density

GS採用0.35um trench 製程進行功率電晶體(Power MOSFET)製作，在相同設計下電流密度增加四倍，導通阻抗(Ron)=0.41mOhm*cm^2

The company said it was using a proprietary process to achieve 200 million cell-per-square-inch density. General Semiconductor said the new technology will be used to offer smaller power devices for cellular phones, notebook computers, and other portable electronics products.

The technology was called a breakthrough in power MOSFETs by Ronald A. Ostertag, chairman and CEO of the Long Island, N.Y.-based semiconductor company. "Our continued investment in our proprietary trench technology allows us to provide more efficient devices in smaller packages, which helps extend battery life in today's portable and wireless devices," he said.

The latest generation of the company's GENFET technology uses a 0.35-micron trench process to create the power MOSFET devices. General Semiconductor said the technology results in a specific RDS(on) of 0.41 milliohm per centimeter squared for a 30-volt P-channel device. The company said this was a 40% improvement over today's 49 million cell-per-square-inch technology.

General Semiconductor also said the new technology provides an improvement in the "on-resistance times gate charge." This specification is improved 60%, resulting in more efficient devices with significantly reduced energy losses, according to the company.

Initial samples of the new MOSFETs are expected to b available by the end of the second quarter. The products will be housed in 6-leaded SOT-23 and SOT-363 packages. Full production is slated to begin this summer

http://www.siliconstrategies.com/story/OEG20010412S0021

(*) 4/16 Fujitsu Intros Power Management ICs For Mobile Apps Fujitsu 發表專為行動通信應用的功率管理ICs

Fujitsu Microelectronics Inc. (FMI) 在聖荷西三款專門為行動電話、個人數位助理(PDAs)及其他可攜式相關的功率管理 ICs。公司也說明這些ICs已經應用在某些日本製造商的通訊產品上....

Fujitsu Microelectronics Inc. (FMI) of San Jose today introduced three power management ICs designed for cellular phones, personal digital

assistants (PDAs) and other mobile devices. The ICs are already included in some Japanese manufacturers' communications products designs, the company said. The MB3891 was developed specifically for current and future GSM applications and future W-CDMA applications, the company said. For more...

http://article.ElectronicNews.com/UM/T.ASP?A5.11.261.10.770680277　

　

更新日期:90.04.13

http://device.erso.itri.org.tw/w000/Internation/news_0404.htm

(*) Siliconix Intros Power Conversion ICs

Siliconix (位於美國加州聖克拉拉)發表了三款應用於筆記型與桌上型電腦的功率轉換ICs

Siliconix Inc., based in Santa Clara, Calif., is rolling out three ICs for power conversion applications in notebook and desktop personal

computers. Siliconix, an 80.4 percent-owned subsidiary of Vishay Intertechnology Inc., today introduced the Si91860DY, designed to

regulate power for network interface cards (NICs), PCMC IA cards and PCI interface cards. For more...

http://article.ElectronicNews.com/UM/T.ASP?A5.11.233.8.770680277　

(*) Uniroyal Technology Corporation to Develop Silicon Carbide Semiconductor Diodes With General Electric Corporate Research & Development

Uniroyal 與 GE合作開發碳化矽蕭特基二極體(SiC schottky diode)。該計畫將使用Sterling公司 所生產的SiC wafers and epitaxy。

Sarasota, FL. Uniroyal Technology Corporation (Nasdaq: UTCI) today
announced that its Sterling Semiconductor subsidiary has expanded its R&D
contract with General Electric Corporate Research & Development (GE CRD) to
include the development and evaluation of Schottky diode semiconductor
devices

http://www.compoundsemiconductor.net/PressReleases/2001/PR04090101.htm

(*) International Rectifier Improves 12V Input Buck Converter Efficiency by 4% with New 20V HEXFETR MOSFETs

IR藉由新型20V HEXFET MOSFETs改善12V input DC-DC之電壓轉換效率4%

<http://www.irf.com/mOUU6akd/whats-new/nr010305.html>

　

(*) International Rectifier Primary- and Secondary-Side MOSFETs Improve Power Density

IR提升DC-DC電路中一次側或二次側功率MOSFETs的電流密度

<http://www.irf.com/mOUU6akd/whats-new/nr010306.html>

(*) 75V ADVANCED TECHNOLOGY MOSFET HANDLES NEW 42V AUTOMOTIVE APPLICATIONS; ACHIEVES 20% REDUCTION IN DIE SIZE

Fairchild以先進的技術開發75V的trench MOSFET, 可設計於新一代42V汽車電池的應用;使用此trench技術並可使此產品的die size降低%20。

特色:

Designed for automotive 42V battery applications

175oC maximum junction temperature

UIS capability (Single pulse and Repetitive pulse)

Internal series gate resistor (min 4.5 ohm) for easier paralleling

Ultra-low on resistance RDS(on)=0.0063 ohm, VGS=10V

April 10th, 2001 - San Jose, Calif.- The new FDB06AN08A1 UltraFETR Trench MOSFET from Fairchild Semiconductor International (NYSE: FCS), is designed for high-current starter/alternator, electronic power steering, electric braking, valve timing and other 42V automotive battery applications requiring full device capability at low gate drive voltages. Employing Fairchild's patented, advanced trench topology, the FDB06AN08A1 die is more than 20% smaller than those of competing technologies. This is particularly significant in the starter/alternator application, where of a large number of devices must be paralleled to accommodate starting currents of up to 1500A.

As mechanical systems are replaced with electronics, the increase in automobile power requirements has prompted the transition from the traditional 12V to a 42V battery to limit current requirements and control wire size and cost. This new 75V MOSFET is designed specifically for these systems that will begin to appear in new car models as early as 2003.

The FDB06AN08A1 N-Channel trench MOSFET features ultra-low RDS(on) (6.3 milliohm, max. at room temperature), 75V breakdown voltage, 175°C maximum junction temperature, an internal gate resistor and unclamped inductive surge (UIS) capability for single (1200mJ @ 75A) and repetitive pulses. Additionally, the die size of the FDB06AN08A1 leaves a substantial amount of D2-Pak (TO263) space available, allowing for die size flexibility and the potential to further lower the RDS(on) for the same package size.

The FDB06AN08A1 was developed and is manufactured at the Mountaintop, Pennsylvania* location, long recognized by industry observers for its technical leadership in power discretes for the automotive industry.

* Acquired in Fairchild's acquisition of Intersil's power discrete product line in March, 2001

Price: U.S.$3.20 each (1,000 pcs.)

Availability: Samples now; production volumes, July 2001

<http://www.fairchildsemi.com/news/2001/0104/fdb06an08a1.html>　

A.電力電子

1.Sipex開發出充電汞反向/倍壓IC，可提供至200mA

Posted : 11 Apr 2001

The SP6661 high-speed, high-current charge pump device can be configured as a voltage doubler or a voltage inverter. Operating at 900kHz, the inverter/doubler utilizes inexpensive, small ceramic capacitors to deliver up to 200mA over -5V to 10V output, with efficiency of at least 85 percent. It targets board-level applications.

It is housed in an 8-lead MSOP and an 8-lead nSOIC, and operates over the -40°C to 85°C temperature range. Pricing is at 86 cent each in 10,000-piece quantities.

http://www.sipex.com/news/pr_20010404.htm

2. 美國國家半導體在單一個合成電路結合多重同步和線性能源控制器

http://www.national.com/news/item/0,1735,634,00.html

3.New Offerings Provide Optimal Power Management Solutions for Computer-Based Systems

Posted : April 4, 2001

Offering the best mix of performance, price and functionality, National Semiconductor Corporation (NYSE: NSM) today announced two highly integrated power management controllers for today's complex embedded computer applications. These products offer a complete power supply for any microprocessor, FPGA or DSP-based system in one compact device. National's new high-efficiency synchronous step-down regulator controllers have multiple outputs that can power notebook computers, networking equipment, internet appliances, set-top boxes, graphics cards including DDR memory, and industrial computer boards.

The LM2633 and LM2645 combine all the blocks needed to create a PCB-level power supply that can operate over an input range of 4.5V to 30V with maximum efficiency. With their wide input voltage range, 10渙 shutdown current, and superior performance, these controllers meet the needs of portable and line-powered systems.

"Multiple IC process technologies dictate more and varied power sources in computer-based system design," said John Perzow, National's business marketing manager for power management products. "National is the only company that combines this level of functionality and performance into one competitively-priced package."

The LM2633 combines two switching controllers and a linear controller. The LM2645 combines all the features of the LM2633 plus a 3.3V/50mA linear regulator. The synchronous switching controllers can operate out of phase, thereby decreasing the input peak current.  This technique results in significant cost savings by reducing the number of capacitors required to operate this supply. The two switching channels can also operate in parallel to create a 2-phase controller for higher power density and lower system noise. A low-current 3.3V linear regulator and an adjustable linear controller provide the additional voltages for standby, bias or any other system need.

National offers free on-line power management product selection and simulation tools as well as thermal simulation capability. As a world leader in power management technology, National provides real world solutions that shorten design cycle, and speed customers' time to market. For innovative power solutions from National,

http://www.national.com/appinfo/power/webench/.

4.摩托羅拉半導體開發出一顆準確之2.6V參考電壓類比IC。

Posted : 06 Apr 2001

The NP4300A monolithic analog IC incorporates a precision 2.6V voltage reference and two op amps to provide accurate current and voltage control of power supplies and battery chargers. The chip is designed for cost-sensitive applications such as charger adapters, notebook PC adapters and power supplies.

Typical feedback-loop circuits may consist of a voltage and current amplifier, summing circuitry and a reference. The chip features these functions and can be configured into an analog regulation control circuit that simultaneously closes the voltage and current feedback with minimal external components. It will control the feedback loop in either constant-voltage or constant-current mode with precise, smooth crossover.

Typical low-input offset voltage is 0.5mV. It has a low-supply current of 210μA per amplifier (5V), a high-precision voltage reference of 1 percent (0°C to 105°C), and sink current capability up to 10mA.

Housed in an SO-8, the NCP4300A is quoted at 40 cents each in 10,000-unit quantities.

http://www.onsemi.com

5.IR開發出功率場效電晶體用在直流/直流轉換器上將可大幅提升換能效率。

Posted : 06 Apr 2001

The IRFB42N20D and IRF3703 TO-220-housed HEXFET power MOSFETs maximize power density and deliver maximum performance in primary- and secondary-side dc/dc converter circuits, respectively. The MOSFETs are specifically designed for high-efficiency, 48V-input isolated dc/dc converters for telecom and datacom systems.

The IRFB42N20D is a 200V MOSFET with a low gate charge of 103nC, which enables reduced switching losses and allows >1 percent increase in efficiency compared to larger TO-247 solutions.

For sub-3.3V output applications, the IRF3703 features optimized characteristics that improve efficiency in secondary-side SRICs. Its 2.8-milliohm drain-source on-resistance reduces conduction losses, while a low gate impedance reduces switching and driver losses.

Pricing for the IRFB42N20D is $1.71 each, and the IRF3703, $1.74 each, both in 10,000-unit quantities

http://www.irf.com

6.Siliconix 開發出新型產品Si91860DY, Si9912與Si9913在桌上型和筆記型電腦中供作功率轉換使用。

Posted : 09 Apr 2001

The Si91860DY, Si9912 and Si9913 are designed for power-conversion applications in notebook and desktop computers.

The Si91860DY regulates power for network interface cards, PCMCIA cards and PCI interface cards. It combines an ultra-low supply current that reduces power consumption with a highly integrated design that requires only four external components for a complete application circuit. It provides peak output current of 600mA (min.), and is capable of carrying at least 400mA continuous-load current.

The Si9912 and Si9913 half-bridge MOSFET drivers offload power MOSFET drive requirements from the controller IC, increasing system design flexibility in desktop and notebook computers, as well as computer peripherals and consumer electronic products. They offer an extended input voltage range (4.5V to 30V), with supply voltage ranging from 4.5V to 5.5V. Housed in 8-pin SOIC, both devices integrate drivers capable of switching a 3nF load with a 60ns propagation delay and 25ns transition time. They also offer a 1A drive current that supports switching frequencies up to 1MHz.

http://www.siliconix.com

 

(B).其他

1.TI 發表DLP(Digital Light Process)新一代全數位平面電視/投影機技術與先導性產品

跟據CBS在50年前的觀念，透過RGB彩色掃描與DMD(Digital Micromirror Device)可表現出高達16700000色階全彩。

DMD為MEMS技術製造，每個DMD內pixel矩陣，美個Pixel Mirror由對應的DRAM控制-10~+10的角度。

http://www.dlp.com/dlp/default.asp

2.HONEYWELL OFFERS HIGH TEMPERATURE INTEGRATED   CIRCUITS AND MULTI-CHIP MODULES FOR ADVANCED   AVIONICS SYSTEMS

JUNE 18,1999-Honeyewll 宣佈HTMOS高溫電子零件可使用於航空系統方面分散式控制、預測、匯流排介面在不同高溫達到225℃的設計上，這些高溫零件能因應智慧型致動器與感測器上的動作。現成的HTMOS可用於Multi-Chip Modules (MCMs)與自定的高溫版上，ICs、MCMs、電路板皆可操作在-55到225℃之間。

http://www.ssec.honeywell.com/hightemp/new.html

3.Toshiba成立衍生公司並將PS2微處理器應用在其他的數位家電中

 April 11, 2001 (TOKYO)Toshiba America Electronic Components Inc. said it will set up a company in San Jose, Calif., to develop microcontrollers incorporating the TX79 microprocessor..

The TX79 is the CPU core in the EmotionEngine, the microprocessor jointly developed by Toshiba and Sony Computer Entertainment Inc. for the PlayStation2 video game machine.

The new company, ArTile Microsystems Inc., will develop microcontrollers incorporating TX79 for diverse applications other than video game machine, such as networking appliances, digital set-top boxes, digital TVs and multimedia appliances. It will be founded with 30 employees, and will have a staff of 200 in 2004.

TAEC is spinning off its San Jose-based microprocessor engineering division as a wholly-owned subsidiary. A TAEC spokesperson said, "Strengthening resources to develop microcontrollers is indispensable for the expansion of the system LSI business. It is better to found a new company to get excellent human resources and give them better incentives."

ArTile plans to achieve sales of US$250 million by 2004.

TEAC is the North American marketing and sales arm of Toshiba Semiconductor Company and Toshiba Display Devices and Components Company.

http://www.toshiba.com/taec/press/to-138.shtml

  更新日期:90.04.09

IR's MOSFETs carry higher radiation hardness

IR 推出一系列新型抗輻射MOSFET，操作電壓30~300V，可在中子照射與迦瑪射線的環境下正常工作。

El Segundo, Calif. - International Rectifier's 30-, 60- 100- and 200-volt p-channel MOSFETs in the R5 Rad-Hard series claim high radiation hardness against total ionizing doses and high immunity to single-event effects. For heavy ions, there is no derating breakdown of voltage for gate thresholds up to 8 or 15 V (depending on the ions' linear-energy transfer rate).

 

"These devices are well suited for systems that must survive penetrating gamma rays and neutron fluence from nuclear detonation," said Richard Southwell, marketing manager for the company's Hi-Rel Components Group.

 

The devices are said to be immune to high-energy particles and are hardened against single-event gate rupture and single-event burnout. A total-dose rating of 1 Mrad allows designers to extend equipment lifetime up to 10 times over current designs using 100-krad devices.

These MOSFETs start at $200 each in lots of 1,000

http://www.siliconstrategies.com/story/OEG20010403S0025

  

更新日期:90.04.04

(A)電力電子產品

(1)三菱電機發佈N型功率MOSFET新產品，導通電阻降低30%

(2)PI公司開發之切換IC提供23瓦之輸出功率。

The TinySwitch-II family of energy-efficient, low-power, offline switcher ICs offers an increased output power capability of up to 23W (15W with a universal input). This monolithic IC family integrates a high-voltage power MOSFET, oscillator and control circuitry into a single CMOS chip.

 

Built-in features include auto-restart for short-circuit and open-loop fault protection, frequency jittering for low EMI filtering cost, current limit and thermal protection, programmable line undervoltage-detection, which prevents power on/off glitches, circuitry to eliminate audible transformer noise, and very tight tolerances with negligible temperature variation on key parameters. The 132kHz internal switching frequency reduces transformer size and allows the use of lower-cost EF12.6 or EE13 cores.

The switcher ICs employ the company's EcoSmart technology, which reduces energy consumption, especially in standby and no-load conditions. Applications are in low-power adapters for portable equipment, such as cell phones, PDAs, digital cameras, external computer peripherals and power tools, and standby power supplies for PCs and A/V devices.

 

In 1,000-piece quantities, pricing ranges from 74 cents each for the 5.5W TNY264P in an 8-pin PDIP, to $1.09 each for the 23W TNY268G in an 8-pin surface-mount package.

http://www.powerint.com

 

(B)其他產品

(1).Honeywell

* Announcing The Worlds Smallest Two Axis Magnetic Sensor.

新的HMC1052是可攜式產品，作為指南與定位的理想磁性感測器。新穎地把兩個感測橋結合再同一晶粒上，在3mmx10mm 10-pin腳的小型表面粘著包裝(MSOP)上達到幾乎完美的直角兩軸感測。

http://www.ssec.honeywell.com/magnetic/new/20010116a.html

 

*New Precision Barometer Provides Outstanding Value For High Stability Pressure Measurement.

矽材壓阻式感測器與新穎精準壓力器內嵌的先進數位補償軟體結合，提供OEMs氣壓器材更加穩定的壓力量測。

http://www.ssec.honeywell.com/pressure/new/20010117.html

 

*February-12-2001 - Honeywell RF/微波產品及服務首度以高水準的SOI技術登場。

http://www.ssec.honeywell.com/microwave/new/20010209.html

 *6/18/99 - Honeywell為先進的航空系統提供高溫IC與Multi-Chip模組。

 *2000-07-17Honeywell 在航空電子產品方面，250萬閘極的ASIC系列以預備生產。

 

(2) *Mitsubishi Electric Corporation發展一套即時模擬器，可以分析分散式系統的電壓變動。此模擬器可改善功率系統設計，例如保護設備方案的解決。

 

*Mitsubishi Electric Corporation發展一種新的，以電化學為基礎的基蝕刻技術，以此技術可藉由控制蝕刻過程中的照度製造出三維的微矽結構。

 

*Mitsubishi Electric Corp.完成了在PDC(Personal Digital Celluar)模式數位移動式行動電話使用60%操作效率的FA01234/FA01231 GaAs FET power amp modules的發展並以大量生產，此產品在行動電話內被廣泛地應用。

 

*Mitsubishi Electric Corp針對N-CDMA*2模式行動電話終端發展了應用HBT*1技術的傳輸功率放大器，此功率放大器的特色為利用HBT精簡功率操作並微小化接面的包裝尺寸，將有助於行動電話的微型化。產品將於2001年三月產出。

**1 HBT: Heterojunction Bipolar Transistor

**2 N-CDMA: Narrow-band Code Division Multiple Access

 

(3)Uncooled Infrared FPA with SOI Diode Detectors

Mitsubishi Electric利用在SOI晶片上的矽材p-n接面二極體當成溫度感測器，以創新的偵測方法與像素結構發展了低雜訊及高感測能力的非冷卻式紅外線FPA*1。

*1: FPA - Focal Plane Array
*2: SOI - Silicon on Insulator

主要特色:

(1)非冷卻式紅外線FPA創新偵測方法的發展:

--利用Si LSI製程，有低價位與高生產力的優勢。

--矽二極體製作在SOI晶片上，有均勻的感測與低雜訊溫度感測的能力。

--感測器的紅外線吸收膜有高的fill factor*3與高感測力。

(2)320 x 240個元素的SOI二極體FPA的發展:

--由一個小像素面積40 x 40µm2所組成的FPA有高達90%的fill factor。

--FPA有0.15°C (f/1.0 optics)極高的溫度解析。

*3: Fill factor - ratio of an infrared absorbing area to a total pixel area.

http://www.mitsubishielectric.com/r_and_d/tech_showcase/ts_d_1.php

　

1.功率元件及IC

(1)Philips

Smart MAX Series 200V Ultra Low Ron SMPT與DC/DC Converter應用

1. 25 55 100 200V

2.Low Ron 15mΩ TO220與25m D-PaK  100V

3.Very Low Gate Charge

http://www-us2.semiconductors.philips.com/discretes/siliconmax/

(2)ABI預測功率電晶體在公元2006年將成長至840億美元

Posted : 30 Mar 2001

Power semiconductor to grow to $8.4 billion in 2006, says ABI

(http://www.alliedworld.com/)

(3)快捷半導體的新單晶片BCDMOS能源開關提升了高效能、低切換模式的能源供應晶片市場需求量

Fairchild Semiconductor International's New Single-Chip BCDMOS Power Switch Boasts High Efficiency, Lowers Switch Mode Power Supply Component Count

(http://www.fairchildsemi.com/)

(4)IR 開發出20V功率場效電晶體用在轉換器上將可大幅提升換能效率。

IR 20V power MOSFETs boost dc/dc converter efficiency

Posted : 29 Mar 2001

(http://www.irf.com/)

(5)通用半導體場效電晶體單元密度可達每平方英吋有8200萬個

General Semiconductor MOSFETs feature 82 million cells per square inch

Posted : 29 Mar 2001

(http://www.gensemi.com/)

　

2.其他

(1)Laminated Chip Technology for System-on-Package

多晶片組的包裝對於未來半導體元件小型化與多重功能、速度、記憶容量需求是不可或缺的。Mitsubishi Electric為了Stacked Multi-Chip Package2 (SMCP)發展了超音波與其他接合技術，這在System-on-Package應用上被廣泛地採納。

*1: System-On-Package - One in which system-level functions, for which multiple chips such as memory and logic are consolidated, have been embedded in a single package. This is in contrast with the System-on-Chip, where the appropriate functions are combined in a single chip.

*2: Stacked Multi-Chip Package - One in which multilayered IC chips are laminated and embedded in a single package.

<http://www.mitsubishielectric.com/r_and_d/tech_showcase/ts_c_2.php>